Conduction-Electron Spin Resonance in HgSe Crystals

Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at s...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (13), p.1672-1676
Hauptverfasser:	Veinger, A. I., Kochman, I. V., Okulov, V. I., Andriichuk, M. D., Paranchich, L. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTALS Electron paramagnetic resonance Electron spin ELECTRON SPIN RESONANCE Electronic Properties of Semiconductors ELECTRONS HYDROGEN IMPURITIES IRON Magnetic Materials Magnetism MERCURY SELENIDES Physics Physics and Astronomy Resonance lines SEMICONDUCTOR MATERIALS Spin resonance
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Beschreibung
Zusammenfassung:	Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618130225