Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications

In this work, the DC and RF performance of a 20 nm gate length novel metal oxide semiconductor high electron mobility transistor (MOSHEMT) on Silicon substrate is studied using Sentaurus TCAD tool. The proposed MOSHEMT device features a novel T-gate structure, heavily doped In 0.52 Ga 0.48 As source/drain regions, delta doped planes on both sides of the In 0.75 Ga 0.25 As/InAs/In 0.75 Ga 0.25 As composite channel, a multi layer cap and a very thin layer of HfO 2 as gate dielectric. The TCAD simulation results obtained at room temperature using hydrodynamic carrier transport model indicates that the 20 nm gate length proposed MOSHEMT device is capable of providing a peak drain current of 2450 mA/mm at V DS = 0.6 V and the peak transconductance obtained for the proposed device is 2900 mS/mm. The f T and f max obtained for the L g = 20 nm proposed MOSHEMT on Silicon substrate are 372 and 480 GHz respectively. At 300 K, the measured Hall mobility of the electrons in the quantum well channel is 9600 cm 2 /(V s). The on state resistance ( R ON ) obtained for the L g = 20 nm proposed device is 116 Ohm μm. These devices are undoubtedly, the most suitable candidates for future sub millimetre wave applications.