Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (16), p.2128-2131
Hauptverfasser:	Sobolev, M. S., Lazarenko, A. A., Mizerov, A. M., Nikitina, E. V., Pirogov, E. V., Timoshnev, S. N., Bouravleuv, A. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Buffer layers BUFFERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH Epitaxial growth Epitaxy GALLIUM PHOSPHIDES Interdiffusion Magnetic Materials Magnetism Migration MOLECULAR BEAM EPITAXY MONOCRYSTALS NUCLEATION P-N JUNCTIONS Physics Physics and Astronomy Silicon substrates
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Zusammenfassung:	The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p -type Si substrate.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618160327