Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition

A new design for diode heterostructures with (Ga, Mn)As ferromagnetic layers is experimentally investigated. The diode structures are fabricated using a combination of metal-organic chemical vapor deposition (MOCVD) epitaxy and pulsed laser deposition and contain (Ga, Mn)As/ n -InGaAs heterojunction...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2019-03, Vol.53 (3), p.332-338
Hauptverfasser:	Zvonkov, B. N., Vikhrova, O. V., Danilov, Yu. A., Dorokhin, M. V., Kudrin, A. V., Kalentyeva, I. L., Larionova, E. A., Kovalskiy, V. A., Soltanovich, O. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers CHEMICAL VAPOR DEPOSITION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Curie temperature Dependence Diodes ELECTRIC POTENTIAL Electrical properties ENERGY BEAM DEPOSITION FERROMAGNETIC MATERIALS Ferromagnetism GALLIUM ARSENIDES Heterojunctions Heterostructures INDIUM ARSENIDES Indium gallium arsenides LASER RADIATION Low-Dimensional Systems MAGNETIC FIELDS Magnetic Materials Magnetic properties Magnetism MAGNETORESISTANCE Magnetoresistivity MANGANESE ARSENIDES Metalorganic chemical vapor deposition Organic chemicals Organic chemistry ORGANOMETALLIC COMPOUNDS P-N JUNCTIONS Physics Physics and Astronomy Potential barriers PULSED IRRADIATION Pulsed laser deposition Pulsed lasers Quantum Phenomena Semiconductor Structures SPIN STRESSES
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Beschreibung
Zusammenfassung:	A new design for diode heterostructures with (Ga, Mn)As ferromagnetic layers is experimentally investigated. The diode structures are fabricated using a combination of metal-organic chemical vapor deposition (MOCVD) epitaxy and pulsed laser deposition and contain (Ga, Mn)As/ n -InGaAs heterojunctions. The electrical properties of the diodes in a magnetic field applied perpendicular to the p – n junction are examined. The negative magnetoresistance observed at temperatures of
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782619030230