Synthesis of Oxygen-Doped Graphitic Carbon Nitride from Thiourea

We have synthesized oxygen-doped graphite-like carbon nitride (g-C 3 N 4 ) by the thermal treatment of the thiourea at 450–550°C. With an increase in the annealing temperature, the oxygen concentration in g-C 3 N 4 increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semic...

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Veröffentlicht in:	Technical physics letters 2019-02, Vol.45 (2), p.108-110
Hauptverfasser:	Denisov, N. M., Chubenko, E. B., Bondarenko, V. P., Borisenko, V. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING AQUEOUS SOLUTIONS Carbon Carbon nitride CARBON NITRIDES Catalytic activity Classical and Continuum Physics CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Decoloring DOPED MATERIALS GRAPHITE Heat treatment OXYGEN PHOTOCATALYSIS Physics Physics and Astronomy RADIATION EFFECTS Rhodamine RHODAMINES SEMICONDUCTOR MATERIALS SYNTHESIS THIOUREA Thioureas VISIBLE RADIATION
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Zusammenfassung:	We have synthesized oxygen-doped graphite-like carbon nitride (g-C 3 N 4 ) by the thermal treatment of the thiourea at 450–550°C. With an increase in the annealing temperature, the oxygen concentration in g-C 3 N 4 increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C 3 N 4 doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C 3 N 4 upon irradiation with visible light.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785019020068