Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions

The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/ n -GaAs and (In, Fe)Sb/ p -GaAs structures are analyzed. The band...

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Veröffentlicht in:	Technical physics letters 2019-07, Vol.45 (7), p.668-671
Hauptverfasser:	Ved’, M. V., Dorokhin, M. V., Lesnikov, V. P., Pavlov, D. A., Usov, Yu. V., Kudrin, A. V., Demina, P. B., Zdoroveishchev, A. V., Danilov, Yu. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Classical and Continuum Physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current voltage characteristics Diodes ELECTRIC CURRENTS ELECTRIC POTENTIAL ELECTRONIC STRUCTURE Gallium arsenide GALLIUM ARSENIDES HETEROJUNCTIONS Heterostructures INDIUM ANTIMONIDES INDIUM ARSENIDES Indium gallium arsenides IRON COMPOUNDS LIGHT EMITTING DIODES MAGNETIC SEMICONDUCTORS Organic light emitting diodes Physics Physics and Astronomy SCHOTTKY EFFECT
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Zusammenfassung:	The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/ n -GaAs and (In, Fe)Sb/ p -GaAs structures are analyzed. The band diagrams of heterojunctions are constructed. It is shown that the investigated structures have the same current transfer mechanism as in the structures with a Schottky barrier.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785019070149