High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range

Molecular beam epitaxy techniques were used to grow a quantum-cascade laser (QCL) heterostructure based on an In 0.53 Ga 0.47 As/Al 0.48 In 0.52 As heteropair lattice-matched with an InP substrate. InP layers were used to form an optical waveguide. The obtained QCL heterostructure ensured room-tempe...

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Veröffentlicht in:Technical physics letters 2019-07, Vol.45 (7), p.735-738
Hauptverfasser: Babichev, A. V., Dudelev, V. V., Gladyshev, A. G., Mikhailov, D. A., Kurochkin, A. S., Kolodeznyi, E. S., Bougrov, V. E., Nevedomskiy, V. N., Karachinsky, L. Ya, Novikov, I. I., Denisov, D. V., Ionov, A. S., Slipchenko, S. O., Lutetskiy, A. V., Pikhtin, N. A., Sokolovskii, G. S., Egorov, A. Yu
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Sprache:eng
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Zusammenfassung:Molecular beam epitaxy techniques were used to grow a quantum-cascade laser (QCL) heterostructure based on an In 0.53 Ga 0.47 As/Al 0.48 In 0.52 As heteropair lattice-matched with an InP substrate. InP layers were used to form an optical waveguide. The obtained QCL heterostructure ensured room-temperature lasing in the 8-μm wavelength range at a maximum output optical power of 0.45 W from one facet in a standard ridge geometry of the Fabry–Pérot cavities formed by cleaved facets.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785019070174