X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness L eff and...

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Veröffentlicht in:	Technical physics 2019-05, Vol.64 (5), p.680-685
Hauptverfasser:	Asadchikov, V. E., D’yachkova, I. G., Zolotov, D. A., Krivonosov, Yu. S., Chukhovskii, F. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Classical and Continuum Physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Crystal defects CRYSTALS DEFECTS DEFORMATION Deformation effects DOPED MATERIALS Hydrogen HYDROGEN IONS Implantation ION IMPLANTATION MICROSTRUCTURE Photonics Physical Science of Materials Physics Physics and Astronomy PLATES Radiation damage RADIATION EFFECTS SILICON Substrates Surface layers THICKNESS X-RAY DIFFRACTION X-RAY EMISSION ANALYSIS
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Beschreibung
Zusammenfassung:	Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness L eff and mean relative deformation Δ a / a of a doped layer, are determined depending on the implantation dose and substrate temperature.
ISSN:	1063-7842 1090-6525
DOI:	10.1134/S1063784219050049