Correction to: Growth of Silicon Carbide Nanolayers on Contact of Porous Carbon with Molten Silicon
Page 1165 (English translation p. 1105) after the Conclusions section there should stay: Acknowledgment . The work was supported by the King Abdul-Azis Center of Science and Technologies (Saudi Arabia).
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| Veröffentlicht in: | Journal of engineering physics and thermophysics 2018, Vol.91 (1), p.264-264 |
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| container_title | Journal of engineering physics and thermophysics |
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| creator | Grinchuk, P. S. Abuhimd, H. M. Fisenko, S. P. Khodyko, Y. A. |
| description | Page 1165 (English translation p. 1105) after the
Conclusions
section there should stay:
Acknowledgment
. The work was supported by the King Abdul-Azis Center of Science and Technologies (Saudi Arabia). |
| doi_str_mv | 10.1007/s10891-018-1729-8 |
| format | Article |
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| subjects | Author Correction CARBON Classical Mechanics Complex Systems ENGINEERING Engineering Thermodynamics Heat and Mass Transfer Industrial Chemistry/Chemical Engineering MATERIALS SCIENCE POROUS MATERIALS SILICON Silicon carbide SILICON CARBIDES Thermodynamics |
| title | Correction to: Growth of Silicon Carbide Nanolayers on Contact of Porous Carbon with Molten Silicon |
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