Correction to: Growth of Silicon Carbide Nanolayers on Contact of Porous Carbon with Molten Silicon

Correction to: Growth of Silicon Carbide Nanolayers on Contact of Porous Carbon with Molten Silicon

Page 1165 (English translation p. 1105) after the Conclusions section there should stay: Acknowledgment . The work was supported by the King Abdul-Azis Center of Science and Technologies (Saudi Arabia).

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Bibliographische Detailangaben
Veröffentlicht in:Journal of engineering physics and thermophysics 2018, Vol.91 (1), p.264-264
Hauptverfasser: Grinchuk, P. S., Abuhimd, H. M., Fisenko, S. P., Khodyko, Y. A.
Format: Artikel
Sprache:eng
Schlagworte:
Author Correction
CARBON
Classical Mechanics
Complex Systems
ENGINEERING
Engineering Thermodynamics
Heat and Mass Transfer
Industrial Chemistry/Chemical Engineering
MATERIALS SCIENCE
POROUS MATERIALS
SILICON
Silicon carbide
SILICON CARBIDES
Thermodynamics
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Beschreibung
Zusammenfassung:Page 1165 (English translation p. 1105) after the Conclusions section there should stay: Acknowledgment . The work was supported by the King Abdul-Azis Center of Science and Technologies (Saudi Arabia).
ISSN:1062-0125
1573-871X
DOI:10.1007/s10891-018-1729-8