Microstructural evolution and electrical resistivity of nanocrystalline W thin films grown by sputtering

Tungsten (W) thin films and nanostructures, particularly those having a beta (β)-phase, have attracted a large amount of attention lately because an ultrathin β-phase W film attached to a ferromagnetic layer can reverse the direction of magnetization upon current injection. However, in-depth microstructural studies including the phase transformation in W films as a function of thickness and post-deposition heat treatment temperature are rare. Here, we report the microstructural evolution and the change in the electrical resistivity of W films with thicknesses of 5–40 nm. Microstructural analyses indicate that the β-W is nanocrystalline with a small grain size of about 5 nm, while the alpha (α)-W has a grain size larger than 130 nm with random crystal orientation. We present a state diagram showing the phase of the W film as functions of film thickness and annealing temperature. [Display omitted] •W thin films with thicknesses of 5–40 nm were deposited by sputtering and annealed up to 400°C.•Grain size of the beta (β)-W was about 5 nm, whereas that of the alpha (α)-W was about 130 nm.•Thickness dependent electrical resistivity variations as a function of annealing temperature were presented.