Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (111) as a basis for improved InGaN-based photovoltaics and LEDs

Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (111) as a basis for improved InGaN-based photovoltaics and LEDs

•Non-polar moth-eye GaN was grown by MOVPE on ZnO nanoarray template on Si (111).•ZnO lattice matches to higher indium content InGaN required for PV or green LEDs.•Relative reflectance was

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Veröffentlicht in:Photonics and nanostructures 2015-06, Vol.15 (C), p.53-58
Hauptverfasser: Rogers, D.J., Sandana, V.E., Gautier, S., Moudakir, T., Abid, M., Ougazzaden, A., Teherani, F. Hosseini, Bove, P., Molinari, M., Troyon, M., Peres, M., Soares, Manuel J., Neves, A.J., Monteiro, T., McGrouther, D., Chapman, J.N., Drouhin, H.-J., McClintock, R., Razeghi, M.
Format: Artikel
Sprache:eng
Schlagworte:
Anti-reflection
InGaN
Moth-eye
Nanostructures
Photovoltaic
ZnO
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Beschreibung
Zusammenfassung:•Non-polar moth-eye GaN was grown by MOVPE on ZnO nanoarray template on Si (111).•ZnO lattice matches to higher indium content InGaN required for PV or green LEDs.•Relative reflectance was
ISSN:1569-4410
1569-4429
DOI:10.1016/j.photonics.2015.03.003