Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission fr...

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Veröffentlicht in:	Technical physics letters 2018-02, Vol.44 (2), p.112-114
Hauptverfasser:	Reznik, R. R., Cirlin, G. E., Shtrom, I. V., Khrebtov, A. I., Soshnikov, I. P., Kryzhanovskaya, N. V., Moiseev, E. I., Zhukov, A. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	ARSENIC COMPOUNDS Classical and Continuum Physics EMISSION Epitaxial growth INDIUM PHOSPHIDES MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOWIRES Physics Physics and Astronomy SUBSTRATES TEMPERATURE RANGE 0273-0400 K
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Zusammenfassung:	Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785018020116