Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range

We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stabilit...

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Veröffentlicht in:	Technical physics letters 2018-02, Vol.44 (2), p.174-177
Hauptverfasser:	Buyalo, M. S., Gadzhiyev, I. M., Il’inskaya, N. D., Usikova, A. A., Novikov, I. I., Karachinsky, L. Ya, Kolodeznyi, E. S., Bougrov, V. E., Egorov, A. Yu, Portnoi, E. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active regions (lasers) Classical and Continuum Physics GALLIUM ARSENIDES GHZ RANGE 01-100 INDIUM ARSENIDES LASERS MODE LOCKING NANOSCIENCE AND NANOTECHNOLOGY Physics Physics and Astronomy PULSES QUANTUM WELLS Repetition Semiconductor lasers SEMICONDUCTOR MATERIALS STABILITY
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Zusammenfassung:	We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785018020189