Local Anodic Oxidation of Graphene Layers on SiC
A method of local anodic oxidation has been used to obtain graphene-oxide regions on SiC. The change of the surface properties was confirmed by atomic-force microscopy and Raman spectroscopy. Experimental data were obtained on the conductivity, potential, and topography of the oxidized regions. It w...
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Veröffentlicht in: | Technical physics letters 2018-05, Vol.44 (5), p.381-383 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A method of local anodic oxidation has been used to obtain graphene-oxide regions on SiC. The change of the surface properties was confirmed by atomic-force microscopy and Raman spectroscopy. Experimental data were obtained on the conductivity, potential, and topography of the oxidized regions. It was shown that the oxidation leads to a rise in the surface potential. A relationship was found between oxidation parameters, such as the scanning velocity and the probe voltage. The method of local anodic oxidation was used to obtain by lithography an ~20-nm-wide nanoribbon and an ~10-nm-wide nanoconstriction. |
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ISSN: | 1063-7850 1090-6533 |
DOI: | 10.1134/S1063785018050024 |