Local Anodic Oxidation of Graphene Layers on SiC

A method of local anodic oxidation has been used to obtain graphene-oxide regions on SiC. The change of the surface properties was confirmed by atomic-force microscopy and Raman spectroscopy. Experimental data were obtained on the conductivity, potential, and topography of the oxidized regions. It w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Technical physics letters 2018-05, Vol.44 (5), p.381-383
Hauptverfasser: Alekseev, P. A., Borodin, B. R., Dunaevskii, M. S., Smirnov, A. N., Davydov, V. Yu, Lebedev, S. P., Lebedev, A. A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of local anodic oxidation has been used to obtain graphene-oxide regions on SiC. The change of the surface properties was confirmed by atomic-force microscopy and Raman spectroscopy. Experimental data were obtained on the conductivity, potential, and topography of the oxidized regions. It was shown that the oxidation leads to a rise in the surface potential. A relationship was found between oxidation parameters, such as the scanning velocity and the probe voltage. The method of local anodic oxidation was used to obtain by lithography an ~20-nm-wide nanoribbon and an ~10-nm-wide nanoconstriction.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785018050024