Combined Technology Fabrication of Spin-Valve Magnetoresistive Elements and Micromagnets

We present the research results of the fabrication technology of magnetoresistive (MR) elements based on the multilayer spin-valve magnetoresistive (SVMR) Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Та nanostructures and CoNi micromagnets for the construction of digital galvanic interchanges and the magnetic...

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Veröffentlicht in:	Technical physics 2018-06, Vol.63 (6), p.848-850
Hauptverfasser:	Amelichev, V. V., Belyakov, P. A., Kostyuk, D. V., Vasil’ev, D. V., Orlov, E. P., Kazakov, Yu. V., Kasatkin, S. I., Krikunov, A. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	BINARY ALLOY SYSTEMS Classical and Continuum Physics COBALT COMPOUNDS COERCIVE FORCE Coercivity COPPER Hard materials IRON COMPOUNDS LAYERS MAGNETIC FIELDS MAGNETIC MATERIALS MAGNETORESISTANCE Magnetoresistivity MANGANESE COMPOUNDS Multilayers NANOSCIENCE AND NANOTECHNOLOGY Nanostructure NANOSTRUCTURES NICKEL COMPOUNDS Physics Physics and Astronomy Sensors SILICON Solid State Electronics SPIN Spin valves TANTALUM TERNARY ALLOY SYSTEMS Thin films Valves
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Zusammenfassung:	We present the research results of the fabrication technology of magnetoresistive (MR) elements based on the multilayer spin-valve magnetoresistive (SVMR) Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Та nanostructures and CoNi micromagnets for the construction of digital galvanic interchanges and the magnetic field sensors. The results of experimental studies of test elements based on multilayer SVMR nanostructures with an MR effect from 7 to 8% and films of magnetically hard materials with a coercive force of up to 95 Oe formed on a single silicon die are presented.
ISSN:	1063-7842 1090-6525
DOI:	10.1134/S1063784218060038