Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field

Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with thin high barriers forming open two-level systems are...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-05, Vol.51 (5), p.594-603
1. Verfasser: Pashkovskii, A. B.
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Sprache:eng
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