Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field
Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with thin high barriers forming open two-level systems are...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-05, Vol.51 (5), p.594-603 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with thin high barriers forming open two-level systems are reported. The dependences of the width and shape of resonant levels on the high-frequency field amplitude are investigated. It is shown that, in these structures there are almost always conditions at which nonresonant scattering channels near the quantum levels can become absolutely transparent. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782617050207 |