Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6 H -SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2017-08, Vol.51 (8), p.1072-1080, Article 1072
Hauptverfasser:	Davydov, V. Yu, Usachov, D. Yu, Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu, Rybkin, A. G., Lebedev, A. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ABLATION ABSORPTION SPECTROSCOPY Argon Atomic beam spectroscopy ATOMIC FORCE MICROSCOPY Atomic structure Carbon Systems CRYSTAL GROWTH Crystal structure DIFFRACTION METHODS ELECTRON DIFFRACTION Electronic properties ELECTRONIC STRUCTURE Epitaxial growth GRAPHENE Low energy electron diffraction Magnetic Materials Magnetism MATERIALS SCIENCE Nuclear electric power generation Photoelectric emission Photoelectron spectroscopy Physics Physics and Astronomy RAMAN SPECTROSCOPY Silicon carbide Silicon substrates Spectroscopic analysis Spectrum analysis Thermal decomposition X-ray diffraction X-RAY PHOTOELECTRON SPECTROSCOPY X-rays
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Beschreibung
Zusammenfassung:	The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6 H -SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.
ISSN:	1063-7826 1090-6479 1090-6479
DOI:	10.1134/S1063782617080073