Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2017-11, Vol.51 (11), p.1395-1398
Hauptverfasser:	Gorshkov, A. P., Volkova, N. S., Voronin, P. G., Zdoroveyshchev, A. V., Istomin, L. A., Pavlov, D. A., Usov, Yu. V., Levichev, S. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	2017 Analysis Composition effects Electrons Gallium arsenide GALLIUM ARSENIDES GROUND STATES INDIUM ARSENIDES Indium gallium arsenides Magnetic Materials Magnetism March 13–16 MATERIALS SCIENCE MEV RANGE Nizhny Novgorod Optical transition Physics Physics and Astronomy QUANTUM DOTS QUANTUM WELLS WAVE FUNCTIONS XXI International Symposium “Nanophysics and Nanoelectronics”
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