Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-11, Vol.51 (11), p.1395-1398
Hauptverfasser: Gorshkov, A. P., Volkova, N. S., Voronin, P. G., Zdoroveyshchev, A. V., Istomin, L. A., Pavlov, D. A., Usov, Yu. V., Levichev, S. B.
Format: Artikel
Sprache:eng
Schlagworte:
2017
Analysis
Composition effects
Electrons
Gallium arsenide
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
Indium gallium arsenides
Magnetic Materials
Magnetism
March 13–16
MATERIALS SCIENCE
MEV RANGE
Nizhny Novgorod
Optical transition
Physics
Physics and Astronomy
QUANTUM DOTS
QUANTUM WELLS
WAVE FUNCTIONS
XXI International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617110136