Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics
The structural quality of GaN/GaInN/Al 2 O 3 heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-12, Vol.51 (13), p.1681-1685 |
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| container_issue | 13 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 51 |
| creator | Vigdorovich, E. N. Ermoshin, I. G. |
| description | The structural quality of GaN/GaInN/Al
2
O
3
heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed. |
| doi_str_mv | 10.1134/S1063782617130140 |
| format | Article |
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2
O
3
heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782617130140</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>ALUMINIUM OXIDES ; Aluminum oxide ; DISLOCATIONS ; Emitters ; Epitaxy ; Gallium nitrate ; GALLIUM NITRIDES ; Heterostructures ; Magnetic Materials ; Magnetism ; Materials for Electronic Engineering ; MATERIALS SCIENCE ; Nitrides ; Physics ; Physics and Astronomy ; QUANTUM WELLS ; X-RAY DIFFRACTION</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (13), p.1681-1685</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>COPYRIGHT 2017 Springer</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c335t-6ed41545929540d942345fb18ae91f479a98ad65b2fff8beb0aa4a618f3d18d53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782617130140$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782617130140$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22756221$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Vigdorovich, E. N.</creatorcontrib><creatorcontrib>Ermoshin, I. G.</creatorcontrib><title>Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The structural quality of GaN/GaInN/Al
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O
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heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed.</description><subject>ALUMINIUM OXIDES</subject><subject>Aluminum oxide</subject><subject>DISLOCATIONS</subject><subject>Emitters</subject><subject>Epitaxy</subject><subject>Gallium nitrate</subject><subject>GALLIUM NITRIDES</subject><subject>Heterostructures</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Materials for Electronic Engineering</subject><subject>MATERIALS SCIENCE</subject><subject>Nitrides</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>QUANTUM WELLS</subject><subject>X-RAY DIFFRACTION</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1UU2LFDEQbUTBdfUHeAt47jWVr-4cl2HdFQZFd8VjqElXdrL0dK9JWpiLv900s6AgkkOKV-896lU1zVvgFwBSvb8FbmTXCwMdSA6KP2vOgFveGtXZ52ttZLv2Xzavcn7gHKDX6qz5dRUC-cLmwMqe2G1Jiy9LwpF9WXCM5bh2ajmV5dB-p3FkWzxSyit8jeMYK_wplhQHYjdUKM35yYIqZ2J3e4qJfcUhYok_iW32mNBXXswl-vy6eRFwzPTm6T9vvn24utvctNvP1x83l9vWS6lLa2hQoJW2wmrFB6uEVDrsoEeyEGpCtD0ORu9ECKHf0Y4jKjTQBzlAP2h53rw7-dbxoss-FvJ7P09Tze6E6LQRAv6wHtP8Y6Fc3MO8pKkO5sBaJfsOdFdZFyfWPY7k4hTmUiPVN9AhVk8KseKXWnRGgOlWAZwEvm4nJwruMcUDpqMD7tbruX-uVzXipMmVO91T-muU_4p-Ax1tnCo</recordid><startdate>20171201</startdate><enddate>20171201</enddate><creator>Vigdorovich, E. N.</creator><creator>Ermoshin, I. G.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20171201</creationdate><title>Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics</title><author>Vigdorovich, E. N. ; Ermoshin, I. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-6ed41545929540d942345fb18ae91f479a98ad65b2fff8beb0aa4a618f3d18d53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>ALUMINIUM OXIDES</topic><topic>Aluminum oxide</topic><topic>DISLOCATIONS</topic><topic>Emitters</topic><topic>Epitaxy</topic><topic>Gallium nitrate</topic><topic>GALLIUM NITRIDES</topic><topic>Heterostructures</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Materials for Electronic Engineering</topic><topic>MATERIALS SCIENCE</topic><topic>Nitrides</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>QUANTUM WELLS</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vigdorovich, E. N.</creatorcontrib><creatorcontrib>Ermoshin, I. G.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vigdorovich, E. N.</au><au>Ermoshin, I. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2017-12-01</date><risdate>2017</risdate><volume>51</volume><issue>13</issue><spage>1681</spage><epage>1685</epage><pages>1681-1685</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The structural quality of GaN/GaInN/Al
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heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782617130140</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (13), p.1681-1685 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22756221 |
| source | SpringerNature Journals |
| subjects | ALUMINIUM OXIDES Aluminum oxide DISLOCATIONS Emitters Epitaxy Gallium nitrate GALLIUM NITRIDES Heterostructures Magnetic Materials Magnetism Materials for Electronic Engineering MATERIALS SCIENCE Nitrides Physics Physics and Astronomy QUANTUM WELLS X-RAY DIFFRACTION |
| title | Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics |
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