Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics

The structural quality of GaN/GaInN/Al 2 O 3 heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2017-12, Vol.51 (13), p.1681-1685
Hauptverfasser:	Vigdorovich, E. N., Ermoshin, I. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM OXIDES Aluminum oxide DISLOCATIONS Emitters Epitaxy Gallium nitrate GALLIUM NITRIDES Heterostructures Magnetic Materials Magnetism Materials for Electronic Engineering MATERIALS SCIENCE Nitrides Physics Physics and Astronomy QUANTUM WELLS X-RAY DIFFRACTION
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Zusammenfassung:	The structural quality of GaN/GaInN/Al 2 O 3 heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782617130140