Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226 Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of t...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-03, Vol.52 (3), p.331-334
Hauptverfasser: Bilenko, D. I., Belobrovaya, O. Ya, Terin, D. V., Galushka, V. V., Galushka, I. V., Zharkova, E. A., Polyanskaya, V. P., Sidorov, V. I., Yagudin, I. T.
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Sprache:eng
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Zusammenfassung:The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226 Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618030077