Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon
The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226 Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of t...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-03, Vol.52 (3), p.331-334 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a
226
Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782618030077 |