Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-05, Vol.52 (5), p.660-663
Hauptverfasser:	Timoshnev, S. N., Mizerov, A. M., Sobolev, M. S., Nikitina, E. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	2017. Nanostructure Technology CRYSTAL GROWTH Electric properties Electrical conductivity Epitaxial growth Epitaxy GALLIUM NITRIDES June 26–30 Liquor Magnetic Materials Magnetism MATERIALS SCIENCE MOLECULAR BEAM EPITAXY Physics Physics and Astronomy Russia Saint Petersburg Silicon Silicon substrates SUBSTRATES Thermal properties XXV International Symposium “Nanostructures: Physics and Technology”
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618050342