Formation of Precipitates in Si Implanted with {sup 64}Zn{sup +} and {sup 16}O{sup +} Ions

The results of studying the surface Si layer and precipitate formation in CZ n-Si(100) samples sequentially implanted with {sup 64}Zn{sup +} ions with a dose of 5 × 10{sup 16} cm{sup 2} and energy of 100 keV and {sup 16}O{sup +} ions with the same dose but an energy of 33 keV at room temperature so that their projection paths R{sub p} = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.