Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation

Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-08, Vol.52 (8), p.1051-1055
Hauptverfasser:	Elistratova, M. A., Poloskin, D. S., Goryachev, D. N., Zakharova, I. B., Sreseli, O. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Complementary metal oxide semiconductors Composite Semiconductors FOURIER TRANSFORM SPECTROMETERS Fourier transforms Gamma irradiation GAMMA RADIATION Gamma rays INFRARED SPECTRA Ionizing radiation IRRADIATION Magnetic Materials Magnetism MATERIALS SCIENCE Microcrystalline Nanocrystalline Oxidation PHOTOLUMINESCENCE Physics Physics and Astronomy POINT DEFECTS Porous POROUS MATERIALS Porous silicon SILICON Spectrum analysis
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Zusammenfassung:	Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618080067