Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength

Room-temperature lasing at a wavelength of 8 μm in multistage quantum-cascade lasers pumped by current pulses is demonstrated. A quantum-cascade laser heterostructure based on the In 0.53 Ga 0.47 As/A l0.48 In 0.5 2As alloy heteropair, matched to an InP substrate, is grown by molecular-beam epitaxy...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-08, Vol.52 (8), p.1082-1085
Hauptverfasser:	Babichev, A. V., Gladyshev, A. G., Kurochkin, A. S., Kolodeznyi, E. S., Sokolovskii, G. S., Bougrov, V. E., Karachinsky, L. Ya, Novikov, I. I., Bousseksou, A. G., Egorov, A. Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	ALLOYS Cladding CURRENT DENSITY Current pulses Epitaxial growth INDIUM PHOSPHIDES LANTHANUM SELENIDES LASERS Lasing Magnetic Materials Magnetism MATERIALS SCIENCE MOLECULAR BEAM EPITAXY Molecular chains Physics Physics and Astronomy Physics of Semiconductor Devices Quantum cascade lasers Room temperature Substrates TEMPERATURE RANGE 0273-0400 K THRESHOLD CURRENT Threshold currents WAVELENGTHS
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Zusammenfassung:	Room-temperature lasing at a wavelength of 8 μm in multistage quantum-cascade lasers pumped by current pulses is demonstrated. A quantum-cascade laser heterostructure based on the In 0.53 Ga 0.47 As/A l0.48 In 0.5 2As alloy heteropair, matched to an InP substrate, is grown by molecular-beam epitaxy and consists of 50 identical cascades placed in a waveguide with air as the top cladding. A threshold current density of ~5.1 kA/cm 2 at a temperature of 300 K is obtained in ridge lasers with a cavity length of 1.4 mm and a ridge width of 24 μm.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618080031