On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures
The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In 0.74 Ga 0.26 As quantum wells and δ-doped In 0.53 Al 0.20 Ga 0.27 As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photolumine...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-09, Vol.52 (9), p.1156-1159 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Kolodeznyi, E. S. Kurochkin, A. S. Rochas, S. S. Babichev, A. V. Novikov, I. I. Gladyshev, A. G. Karachinsky, L. Ya Savelyev, A. V. Egorov, A. Yu Denisov, D. V. |
| description | The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In
0.74
Ga
0.26
As quantum wells and δ-doped In
0.53
Al
0.20
Ga
0.27
As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that
p
-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10
12
cm
–2
results in the suppression of nonradiative recombination. |
| doi_str_mv | 10.1134/S1063782618090075 |
| format | Article |
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0.74
Ga
0.26
As quantum wells and δ-doped In
0.53
Al
0.20
Ga
0.27
As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that
p
-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10
12
cm
–2
results in the suppression of nonradiative recombination.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782618090075</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Barrier layers ; DOPED MATERIALS ; Doping ; EFFICIENCY ; Epitaxial growth ; Epitaxy ; GALLIUM ARSENIDES ; Heterostructures ; INDIUM ARSENIDES ; INDIUM PHOSPHIDES ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; Molecular beams ; PHOTOLUMINESCENCE ; Physics ; Physics and Astronomy ; Quantum Phenomena ; QUANTUM WELLS ; Semiconductor Structures ; Substrates</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1156-1159</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>COPYRIGHT 2018 Springer</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-cd99177358151714817be7d4580ca2913e6e848c8794888fb4e7c6e8ff0072dc3</citedby><cites>FETCH-LOGICAL-c383t-cd99177358151714817be7d4580ca2913e6e848c8794888fb4e7c6e8ff0072dc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782618090075$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782618090075$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22749803$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kolodeznyi, E. S.</creatorcontrib><creatorcontrib>Kurochkin, A. S.</creatorcontrib><creatorcontrib>Rochas, S. S.</creatorcontrib><creatorcontrib>Babichev, A. V.</creatorcontrib><creatorcontrib>Novikov, I. I.</creatorcontrib><creatorcontrib>Gladyshev, A. G.</creatorcontrib><creatorcontrib>Karachinsky, L. Ya</creatorcontrib><creatorcontrib>Savelyev, A. V.</creatorcontrib><creatorcontrib>Egorov, A. Yu</creatorcontrib><creatorcontrib>Denisov, D. V.</creatorcontrib><title>On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In
0.74
Ga
0.26
As quantum wells and δ-doped In
0.53
Al
0.20
Ga
0.27
As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that
p
-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10
12
cm
–2
results in the suppression of nonradiative recombination.</description><subject>Barrier layers</subject><subject>DOPED MATERIALS</subject><subject>Doping</subject><subject>EFFICIENCY</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>GALLIUM ARSENIDES</subject><subject>Heterostructures</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM PHOSPHIDES</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Molecular beams</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>QUANTUM WELLS</subject><subject>Semiconductor Structures</subject><subject>Substrates</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kU1PJCEQhjub3WRd1x_grRPPrdDQDRxH149JJtFEPROsLmYwMzAL9GFu-9OXtk08GMOh3hTvU1RRVXVKyTmljF88UtIzIdueSqIIEd236ogW1fRcqO-T7lkz3f-sfqX0SgilsuNH1b97X-cN1svd3kCug60vTYwOY7MyB4z1n7B3fl2H2fWwCTlsx53zmAA9YH1trQNX5GFil_7WLLaLdPEmpvBQP-Zoin94L3iHGWNIOY6Qx4jpd_XDmm3Ck_d4XD3fXD9d3TWr-9vl1WLVAJMsNzAoRYVgnaQdFZRLKl5QDLyTBEyrKMMeJZcgheJSSvvCUUBJWVs-ox2AHVdnc93yttMJXEbYQPAeIeu2FVxJwj5c-xj-jpiyfg1j9KUx3RLVdoILKYrrfHatzRa18zaUGaGcAXeu1ETrSn7RdZQpIgkpAJ0BKKOniFbvo9uZeNCU6Gl_-tP-CtPOTCpev8b40crX0H-RXJrK</recordid><startdate>20180901</startdate><enddate>20180901</enddate><creator>Kolodeznyi, E. S.</creator><creator>Kurochkin, A. S.</creator><creator>Rochas, S. S.</creator><creator>Babichev, A. V.</creator><creator>Novikov, I. I.</creator><creator>Gladyshev, A. G.</creator><creator>Karachinsky, L. Ya</creator><creator>Savelyev, A. V.</creator><creator>Egorov, A. Yu</creator><creator>Denisov, D. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20180901</creationdate><title>On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures</title><author>Kolodeznyi, E. S. ; Kurochkin, A. S. ; Rochas, S. S. ; Babichev, A. V. ; Novikov, I. I. ; Gladyshev, A. G. ; Karachinsky, L. Ya ; Savelyev, A. V. ; Egorov, A. Yu ; Denisov, D. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-cd99177358151714817be7d4580ca2913e6e848c8794888fb4e7c6e8ff0072dc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Barrier layers</topic><topic>DOPED MATERIALS</topic><topic>Doping</topic><topic>EFFICIENCY</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>GALLIUM ARSENIDES</topic><topic>Heterostructures</topic><topic>INDIUM ARSENIDES</topic><topic>INDIUM PHOSPHIDES</topic><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Molecular beams</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Phenomena</topic><topic>QUANTUM WELLS</topic><topic>Semiconductor Structures</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kolodeznyi, E. S.</creatorcontrib><creatorcontrib>Kurochkin, A. S.</creatorcontrib><creatorcontrib>Rochas, S. S.</creatorcontrib><creatorcontrib>Babichev, A. V.</creatorcontrib><creatorcontrib>Novikov, I. I.</creatorcontrib><creatorcontrib>Gladyshev, A. G.</creatorcontrib><creatorcontrib>Karachinsky, L. Ya</creatorcontrib><creatorcontrib>Savelyev, A. V.</creatorcontrib><creatorcontrib>Egorov, A. Yu</creatorcontrib><creatorcontrib>Denisov, D. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kolodeznyi, E. S.</au><au>Kurochkin, A. S.</au><au>Rochas, S. S.</au><au>Babichev, A. V.</au><au>Novikov, I. I.</au><au>Gladyshev, A. G.</au><au>Karachinsky, L. Ya</au><au>Savelyev, A. V.</au><au>Egorov, A. Yu</au><au>Denisov, D. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2018-09-01</date><risdate>2018</risdate><volume>52</volume><issue>9</issue><spage>1156</spage><epage>1159</epage><pages>1156-1159</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In
0.74
Ga
0.26
As quantum wells and δ-doped In
0.53
Al
0.20
Ga
0.27
As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that
p
-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10
12
cm
–2
results in the suppression of nonradiative recombination.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782618090075</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1156-1159 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Barrier layers DOPED MATERIALS Doping EFFICIENCY Epitaxial growth Epitaxy GALLIUM ARSENIDES Heterostructures INDIUM ARSENIDES INDIUM PHOSPHIDES Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE MOLECULAR BEAM EPITAXY Molecular beams PHOTOLUMINESCENCE Physics Physics and Astronomy Quantum Phenomena QUANTUM WELLS Semiconductor Structures Substrates |
| title | On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
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