On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In 0.74 Ga 0.26 As quantum wells and δ-doped In 0.53 Al 0.20 Ga 0.27 As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photolumine...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-09, Vol.52 (9), p.1156-1159
Hauptverfasser:	Kolodeznyi, E. S., Kurochkin, A. S., Rochas, S. S., Babichev, A. V., Novikov, I. I., Gladyshev, A. G., Karachinsky, L. Ya, Savelyev, A. V., Egorov, A. Yu, Denisov, D. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Barrier layers DOPED MATERIALS Doping EFFICIENCY Epitaxial growth Epitaxy GALLIUM ARSENIDES Heterostructures INDIUM ARSENIDES INDIUM PHOSPHIDES Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE MOLECULAR BEAM EPITAXY Molecular beams PHOTOLUMINESCENCE Physics Physics and Astronomy Quantum Phenomena QUANTUM WELLS Semiconductor Structures Substrates
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Zusammenfassung:	The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In 0.74 Ga 0.26 As quantum wells and δ-doped In 0.53 Al 0.20 Ga 0.27 As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p -type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10 12 cm –2 results in the suppression of nonradiative recombination.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618090075