MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-11, Vol.52 (11), p.1428-1431
Hauptverfasser: Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Lebedev, S. P., Lebedev, A. A., Kirilenko, D. A., Alexeev, P. A., Cirlin, G. E.
Format: Artikel
Sprache:eng
Schlagworte:
2018
Crystal defects
CRYSTAL GROWTH
CRYSTALLOGRAPHY
Epitaxial growth
Epitaxy
GRAPHENE
Graphite
INDIUM PHOSPHIDES
Magnetic Materials
Magnetism
March 12–15
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NANOWIRES
Nizhny Novgorod
Physics
Physics and Astronomy
SILICON CARBIDES
STACKING FAULTS
SUBSTRATES
Wurtzite
Xxii International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618110210