Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices

Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices

The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calcu...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-11, Vol.52 (11), p.1448-1456
Hauptverfasser: Pavelyev, D. G., Vasilev, A. P., Kozlov, V. A., Obolenskaya, E. S.
Format: Artikel
Sprache:eng
Schlagworte:
2018
ALUMINIUM ARSENIDES
Current voltage characteristics
Diodes
ELECTRONIC STRUCTURE
EQUIVALENT CIRCUITS
Gallium arsenide
GALLIUM ARSENIDES
Magnetic Materials
Magnetism
March 12–15
MATERIALS SCIENCE
MEV RANGE
NANOSTRUCTURES
Neutron irradiation
Neutrons
Nizhny Novgorod
Physics
Physics and Astronomy
Radiation tolerance
SUPERLATTICES
Xxii International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618110192