Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation

The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transis...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1518-1524
Hauptverfasser:	Venediktov, M. M., Tarasova, E. A., Bozhen’kina, A. D., Obolensky, S. V., Elesin, V. V., Chukov, G. V., Metelkin, I. O., Krevskiy, M. A., Dukov, D. I., Fefelov, A. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	2018 IRRADIATION Magnetic Materials Magnetism March 12–15 MATERIALS SCIENCE MICROWAVE RADIATION Neutron irradiation Neutrons Nizhny Novgorod Physics Physics and Astronomy Radiation effects Semiconductor devices SEMICONDUCTOR MATERIALS TRANSISTORS Xxii International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:	The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618120266