Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy

On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the dif...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1525-1528
Hauptverfasser:	Gorshkov, A. P., Volkova, N. S., Pavlov, D. A., Usov, Yu. V., Istomin, L. A., Levichev, S. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	2018 ATMOSPHERIC PRESSURE BASES CHARGE CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current carriers Epitaxial growth Galling GALLIUM ARSENIDES GROUND STATES INDIUM ARSENIDES Magnetic Materials Magnetism March 12–15 MATERIALS SCIENCE Nizhny Novgorod Physics Physics and Astronomy Pyramids QUANTUM DOTS Quantum theory STRUCTURAL MODELS VAPOR PHASE EPITAXY WAVE FUNCTIONS Xxii International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:	On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the diffusive smearing of the composition near the base and lateral surface as well as the segregation of indium near the vertex. It is established that the wave functions of charge carriers in the ground state are localized in a comparatively small region of the quantum dot near its vertex.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618120096