Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

The longitudinal ρ xx and Hall ρ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n -In 0.9 Ga 0.1 As/In 0.81 Al 0.19 As. The nonuniversal...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1551-1558
Hauptverfasser: Gudina, S. V., Arapov, Yu. G., Ilchenko, E. I., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.
Format: Artikel
Sprache:eng
Schlagworte:
2018
Electromagnetism
GALLIUM ARSENIDES
HALL EFFECT
HIGH ROOMS
INDIUM ARSENIDES
MAGNETIC FIELDS
Magnetic Materials
Magnetism
March 12–15
MATERIALS SCIENCE
Nizhny Novgorod
PEAKS
PHASE TRANSFORMATIONS
Phase transitions
Physics
Physics and Astronomy
Quantum Hall effect
Scaling
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS
Xxii International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:The longitudinal ρ xx and Hall ρ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n -In 0.9 Ga 0.1 As/In 0.81 Al 0.19 As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρ xx peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618120102