Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors

On the basis of a Pb 1 – x Sn x Se solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb 1 – x Sn x Se single crystals are grown from the vapor phase under the conditions of free growth (unseeded vapor-g...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1590-1594
Hauptverfasser: Maremyanin, K. V., Ikonnikov, A. V., Bovkun, L. S., Rumyantsev, V. V., Chizhevskii, E. G., Zasavitskii, I. I., Gavrilenko, V. I.
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Sprache:eng
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Zusammenfassung:On the basis of a Pb 1 – x Sn x Se solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb 1 – x Sn x Se single crystals are grown from the vapor phase under the conditions of free growth (unseeded vapor-growth technique). By the example of a HgCdTe narrow-gap semiconductor and a quantum-well heterostructure, the possibility of applying the developed lasers in solid-state spectroscopy is demonstrated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618120163