Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors
On the basis of a Pb 1 – x Sn x Se solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb 1 – x Sn x Se single crystals are grown from the vapor phase under the conditions of free growth (unseeded vapor-g...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1590-1594 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | On the basis of a Pb
1 –
x
Sn
x
Se solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb
1 –
x
Sn
x
Se single crystals are grown from the vapor phase under the conditions of free growth (unseeded vapor-growth technique). By the example of a HgCdTe narrow-gap semiconductor and a quantum-well heterostructure, the possibility of applying the developed lasers in solid-state spectroscopy is demonstrated. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782618120163 |