Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperatur...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2016-07, Vol.50 (7), p.976-979
Hauptverfasser:	Parkhomenko, Ya. A., Dement’ev, P. A., Moiseev, K. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	ATOMIC FORCE MICROSCOPY CHEMICAL PROPERTIES CRYSTAL GROWTH CRYSTAL STRUCTURE DENSITY DEPOSITION Epitaxy Fabrication GALLIUM ANTIMONIDES INDIUM ANTIMONIDES LIQUID PHASE EPITAXY LIQUIDS Magnetic Materials Magnetism MATERIALS SCIENCE MATRIX MATERIALS Physics Physics and Astronomy QUANTUM DOTS SUBSTRATES SURFACES TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0400-1000 K Testing of Materials and Structures Treatment
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Zusammenfassung:	The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range T = 450–465°C. The average dimensions of the quantum dots correspond to a height of h = 3 nm and a base dimension of D = 30 nm; the surface density is 3 × 10 9 cm –2 .
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782616070198