Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority ch...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-08, Vol.50 (8), p.1107-1111
Hauptverfasser: Aleksandrov, P. A., Baranova, E. K., Budaragin, V. V.
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
CHARGE CARRIERS
CONCENTRATION RATIO
Electric fields
Fabrication
HELIUM IONS
ION IMPLANTATION
IRRADIATION
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
POROUS MATERIALS
Radiation (Physics)
SAPPHIRE
SILICON
SUBSTRATES
Testing of Materials and Structures
Treatment
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Zusammenfassung:We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616080054