Electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S rare-earth semiconductors
The electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined....
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782616090116 |