Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9), p.1261-1272
Hauptverfasser: Seredin, P. V., Goloshchapov, D. L., Lenshin, A. S., Lukin, A. N., Fedyukin, A. V., Arsentyev, I. N., Bondarev, A. D., Lubyanskiy, Y. V., Tarasov, I. S.
Format: Artikel
Sprache:eng
Schlagworte:
ABSORPTION SPECTROSCOPY
ALUMINIUM
ALUMINIUM NITRIDES
Aluminum
Aluminum compounds
Aluminum nitride
Analysis
ATOMIC FORCE MICROSCOPY
ENERGY GAP
Fabrication
Gallium arsenide
GALLIUM ARSENIDES
Infrared analysis
INFRARED SPECTRA
Infrared spectroscopy
Investigations
Ion plasma sputtering
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MORPHOLOGY
NANOSTRUCTURES
Nitrides
Optical properties
ORIENTATION
Physics
Physics and Astronomy
PLASMA
REFRACTIVE INDEX
Refractivity
SPUTTERING
Structural analysis
SUBSTRATES
Testing of Materials and Structures
THIN FILMS
Treatment
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA
Ultraviolet-visible spectroscopy
VISIBLE SPECTRA
Wave propagation
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Zusammenfassung:Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616090219