Specific features of waveguide recombination in laser structures with asymmetric barrier layers
The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm 2 ) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical micro...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-02, Vol.51 (2), p.254-259 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm
2
) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the
p
-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the
n
-type cladding layer to suppress the hole transport. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782617020142 |