Specific features of waveguide recombination in laser structures with asymmetric barrier layers

The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm 2 ) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical micro...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-02, Vol.51 (2), p.254-259
Hauptverfasser: Polubavkina, Yu. S., Zubov, F. I., Moiseev, E. I., Kryzhanovskaya, N. V., Maximov, M. V., Semenova, E. S., Yvind, K., Asryan, L. V., Zhukov, A. E.
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Sprache:eng
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Zusammenfassung:The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm 2 ) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p -type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n -type cladding layer to suppress the hole transport.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617020142