Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals
A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n +...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (13), p.1759-1763 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1763 |
|---|---|
| container_issue | 13 |
| container_start_page | 1759 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 50 |
| creator | Usanov, D. A. Nikitov, S. A. Skripal, A. V. Ponomarev, D. V. Latysheva, E. V. |
| description | A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the
n
layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial
n
+
layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented. |
| doi_str_mv | 10.1134/S1063782616130091 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22645318</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A498316570</galeid><sourcerecordid>A498316570</sourcerecordid><originalsourceid>FETCH-LOGICAL-c335t-478cd983a3b44e2a25ccc3decc1e0cea5d07a114308e298df59b55c7d4cbae873</originalsourceid><addsrcrecordid>eNp1kUFv1DAQhSMEEqXwA7hZ4pziie3EOVYVUKRWHICz5Z1MGle78eJxWO2_xyFIVELIhxnZ3xs9v6mqtyCvAJR-_xVkqzrbtNCCkrKHZ9UFyF7Wre7652vfqnp9f1m9Yn6UEsAafVGd7snzkuhAc2YRR0F7wpzicTpzQL8XOPnkMVMKnAP-RpgOAeM8LJhjEpxTacoIFqeQJ5EnEgvTChYsxZP_SeI4xRzngALTmbPf8-vqxVgKvflTL6vvHz98u7mt7758-nxzfVejUibXurM49FZ5tdOaGt8YRFQDIQJJJG8G2XkAraSlprfDaPqdMdgNGneebKcuq3fb3FjsO8aQCadifi6_dE3TaqPA_qWOKf5YiLN7jEuaizEH1squl7aRhbraqAe_JxfmMeYSTTnDFgiNodxf6-IXWtOtAtgEJQbmRKM7pnDw6exAunVt7p-1FU2zabiw8wOlJ1b-K_oFIw6cRw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880790820</pqid></control><display><type>article</type><title>Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals</title><source>SpringerNature Journals</source><creator>Usanov, D. A. ; Nikitov, S. A. ; Skripal, A. V. ; Ponomarev, D. V. ; Latysheva, E. V.</creator><creatorcontrib>Usanov, D. A. ; Nikitov, S. A. ; Skripal, A. V. ; Ponomarev, D. V. ; Latysheva, E. V.</creatorcontrib><description>A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the
n
layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial
n
+
layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782616130091</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Arsenides ; Crystal structure ; CRYSTALS ; DOPED MATERIALS ; ELECTRIC CONDUCTIVITY ; Electric properties ; Electrical conductivity ; Electrical resistivity ; EPITAXY ; Gallium ; Gallium arsenide ; GALLIUM ARSENIDES ; LAYERS ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Measurement ; Methods and Technique of Measurements ; Microwave photonics ; MICROWAVE RADIATION ; N-TYPE CONDUCTORS ; Photonic crystals ; Physics ; Physics and Astronomy ; SUBSTRATES ; Thickness</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (13), p.1759-1763</ispartof><rights>Pleiades Publishing, Ltd. 2016</rights><rights>COPYRIGHT 2016 Springer</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c335t-478cd983a3b44e2a25ccc3decc1e0cea5d07a114308e298df59b55c7d4cbae873</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782616130091$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782616130091$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22645318$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Usanov, D. A.</creatorcontrib><creatorcontrib>Nikitov, S. A.</creatorcontrib><creatorcontrib>Skripal, A. V.</creatorcontrib><creatorcontrib>Ponomarev, D. V.</creatorcontrib><creatorcontrib>Latysheva, E. V.</creatorcontrib><title>Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the
n
layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial
n
+
layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.</description><subject>Arsenides</subject><subject>Crystal structure</subject><subject>CRYSTALS</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>Electric properties</subject><subject>Electrical conductivity</subject><subject>Electrical resistivity</subject><subject>EPITAXY</subject><subject>Gallium</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>LAYERS</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Measurement</subject><subject>Methods and Technique of Measurements</subject><subject>Microwave photonics</subject><subject>MICROWAVE RADIATION</subject><subject>N-TYPE CONDUCTORS</subject><subject>Photonic crystals</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SUBSTRATES</subject><subject>Thickness</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kUFv1DAQhSMEEqXwA7hZ4pziie3EOVYVUKRWHICz5Z1MGle78eJxWO2_xyFIVELIhxnZ3xs9v6mqtyCvAJR-_xVkqzrbtNCCkrKHZ9UFyF7Wre7652vfqnp9f1m9Yn6UEsAafVGd7snzkuhAc2YRR0F7wpzicTpzQL8XOPnkMVMKnAP-RpgOAeM8LJhjEpxTacoIFqeQJ5EnEgvTChYsxZP_SeI4xRzngALTmbPf8-vqxVgKvflTL6vvHz98u7mt7758-nxzfVejUibXurM49FZ5tdOaGt8YRFQDIQJJJG8G2XkAraSlprfDaPqdMdgNGneebKcuq3fb3FjsO8aQCadifi6_dE3TaqPA_qWOKf5YiLN7jEuaizEH1squl7aRhbraqAe_JxfmMeYSTTnDFgiNodxf6-IXWtOtAtgEJQbmRKM7pnDw6exAunVt7p-1FU2zabiw8wOlJ1b-K_oFIw6cRw</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Usanov, D. A.</creator><creator>Nikitov, S. A.</creator><creator>Skripal, A. V.</creator><creator>Ponomarev, D. V.</creator><creator>Latysheva, E. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20161201</creationdate><title>Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals</title><author>Usanov, D. A. ; Nikitov, S. A. ; Skripal, A. V. ; Ponomarev, D. V. ; Latysheva, E. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-478cd983a3b44e2a25ccc3decc1e0cea5d07a114308e298df59b55c7d4cbae873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Arsenides</topic><topic>Crystal structure</topic><topic>CRYSTALS</topic><topic>DOPED MATERIALS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>Electric properties</topic><topic>Electrical conductivity</topic><topic>Electrical resistivity</topic><topic>EPITAXY</topic><topic>Gallium</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>LAYERS</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>Measurement</topic><topic>Methods and Technique of Measurements</topic><topic>Microwave photonics</topic><topic>MICROWAVE RADIATION</topic><topic>N-TYPE CONDUCTORS</topic><topic>Photonic crystals</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>SUBSTRATES</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Usanov, D. A.</creatorcontrib><creatorcontrib>Nikitov, S. A.</creatorcontrib><creatorcontrib>Skripal, A. V.</creatorcontrib><creatorcontrib>Ponomarev, D. V.</creatorcontrib><creatorcontrib>Latysheva, E. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Usanov, D. A.</au><au>Nikitov, S. A.</au><au>Skripal, A. V.</au><au>Ponomarev, D. V.</au><au>Latysheva, E. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2016-12-01</date><risdate>2016</risdate><volume>50</volume><issue>13</issue><spage>1759</spage><epage>1763</epage><pages>1759-1763</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the
n
layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial
n
+
layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782616130091</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (13), p.1759-1763 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22645318 |
| source | SpringerNature Journals |
| subjects | Arsenides Crystal structure CRYSTALS DOPED MATERIALS ELECTRIC CONDUCTIVITY Electric properties Electrical conductivity Electrical resistivity EPITAXY Gallium Gallium arsenide GALLIUM ARSENIDES LAYERS Magnetic Materials Magnetism MATERIALS SCIENCE Measurement Methods and Technique of Measurements Microwave photonics MICROWAVE RADIATION N-TYPE CONDUCTORS Photonic crystals Physics Physics and Astronomy SUBSTRATES Thickness |
| title | Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T19%3A25%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Measurements%20of%20electrophysical%20characteristics%20of%20semiconductor%20structures%20with%20the%20use%20of%20microwave%20photonic%20crystals&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Usanov,%20D.%20A.&rft.date=2016-12-01&rft.volume=50&rft.issue=13&rft.spage=1759&rft.epage=1763&rft.pages=1759-1763&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782616130091&rft_dat=%3Cgale_osti_%3EA498316570%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1880790820&rft_id=info:pmid/&rft_galeid=A498316570&rfr_iscdi=true |