Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n +...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (13), p.1759-1763
Hauptverfasser:	Usanov, D. A., Nikitov, S. A., Skripal, A. V., Ponomarev, D. V., Latysheva, E. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arsenides Crystal structure CRYSTALS DOPED MATERIALS ELECTRIC CONDUCTIVITY Electric properties Electrical conductivity Electrical resistivity EPITAXY Gallium Gallium arsenide GALLIUM ARSENIDES LAYERS Magnetic Materials Magnetism MATERIALS SCIENCE Measurement Methods and Technique of Measurements Microwave photonics MICROWAVE RADIATION N-TYPE CONDUCTORS Photonic crystals Physics Physics and Astronomy SUBSTRATES Thickness
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n + layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782616130091