Resonant features of the terahertz generation in semiconductor nanowires

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (12), p.1561-1565
Hauptverfasser:	Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Cirlin, G. E., Kuritsyn, D. I., Rumyantsev, V. V., Morosov, S. V., Kakko, J. P., Huhtio, T., Lipsanen, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	2016 Arrays Electromagnetic radiation Emitters EXCITATION Gallium arsenide GALLIUM ARSENIDES INDIUM ARSENIDES Magnetic Materials Magnetism March 14–18 MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY NANOWIRES Nizhny Novgorod Optical properties Optical pulses P-TYPE CONDUCTORS Physics Physics and Astronomy Radiation THZ RANGE XX International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:	The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p -InAs, which is one of the most effective coherent terahertz emitters.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782616120241