Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (12), p.1619-1621
Hauptverfasser:	Shtrom, I. V., Bouravleuv, A. D., Samsonenko, Yu. B., Khrebtov, A. I., Soshnikov, I. P., Reznik, R. R., Cirlin, G. E., Dhaka, V., Perros, A., Lipsanen, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	2016 ALUMINIUM NITRIDES Aluminum compounds Atomic layer epitaxy Chemical synthesis Epitaxy Gallium arsenide GALLIUM ARSENIDES LAYERS Low temperature Magnetic Materials Magnetism March 14–18 MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOWIRES Nizhny Novgorod OPTICAL PROPERTIES PASSIVATION PHOTOLUMINESCENCE Physics Physics and Astronomy TEMPERATURE DEPENDENCE THIN FILMS XX International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:	It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782616120186