A study on the epitaxial Bi{sub 2}Se{sub 3} thin film grown by vapor phase epitaxy

We report the growth of high quality Bi{sub 2}Se{sub 3} thin films on Al{sub 2}O{sub 3} substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al{sub 2}O{sub 3} substrate. Carrier concentration in the sample is found to be 1.1 × 10{sup 19} cm{sup −3} between T = 2 K to T = 300 K, and electron mobility can reach 954 cm{sup 2}/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.