Attempts to improve the H{sub 2}S sensitivity of TiO{sub 2} films

We report the pulsed laser deposited titanium oxide thin film for H{sub 2}S gas sensing. The surface and bulk electronic structure is revealed using XPS technique. These TiO{sub 2} films showed very good selectivity to H{sub 2}S with response of around ~ 60% at 200°C operating temperature. In order to improve the sensor response so as to realize the technological application, we hereby attempted bi-directional efforts as (i) Nb-doping and (ii) defects engineering in the TiO{sub 2} film. It is revealed that Nb-doping reduces response however defect engineering improves the same.