Test results of a counting type SOI device for a new x-ray area detector

Development of a new detector using Silicon-On-Insulator (SOI) technology has been started in the Photon Factory, KEK. The aim of this project is to develop a pulse-counting-type X-ray detector that can be used in synchrotron radiation experiments using soft X-rays. We started to make a Test Element...

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Veröffentlicht in:AIP conference proceedings 2016-07, Vol.1741 (1)
Hauptverfasser: Hashimoto, R., Arai, Y., Igarashi, N., Kumai, R., Miyoshi, T., Kishimoto, S.
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Sprache:eng
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Zusammenfassung:Development of a new detector using Silicon-On-Insulator (SOI) technology has been started in the Photon Factory, KEK. The aim of this project is to develop a pulse-counting-type X-ray detector that can be used in synchrotron radiation experiments using soft X-rays. We started to make a Test Element Group of SOI chip, which is called CPIXPTEG1 and evaluated its performance. We succeeded in readout of output signals for 16 keV X-rays from the SOI chips. We also found that the middle-SOI structure was effective against a signal distortion caused by hole traps in the buried oxide layer.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4952903