Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The intersubband transition frequency, dipole matrix elements, and absorption spectra are c...

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Veröffentlicht in:Journal of applied physics 2016-05, Vol.119 (17)
Hauptverfasser: Fu, Houqiang, Lu, Zhijian, Huang, Xuanqi, Chen, Hong, Zhao, Yuji
Format: Artikel
Sprache:eng
Schlagworte:
ABSORPTION
ABSORPTION SPECTRA
ALUMINIUM NITRIDES
Aluminum gallium nitrides
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Crystal structure
CRYSTALS
DIPOLES
GALLIUM NITRIDES
Intersubband transitions
MATRIX ELEMENTS
OPTICAL PROPERTIES
OPTOELECTRONIC DEVICES
Planes
POLARIZATION
QUANTUM EFFICIENCY
QUANTUM WELLS
THICKNESS
WAVELENGTHS
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Zusammenfassung:The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The intersubband transition frequency, dipole matrix elements, and absorption spectra are calculated for SQW on different semipolar planes. It is found that SQW on a certain group of semipolar planes (55° 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4948667