On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film

Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0...

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Veröffentlicht in:Applied physics letters 2016-07, Vol.109 (4)
Hauptverfasser: Chernev, I. M., Shevlyagin, A. V., Galkin, K. N., Stuchlik, J., Remes, Z., FBE CTU, Nam. Sitna 3105, 272 01 Kladno, Fajgar, R., Galkin, N. G., Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok
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Sprache:eng
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Zusammenfassung:Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4960011